Semiconductor device and semiconductor wafer and a method for manufacturing the same

ABSTRACT

The semiconductor device  1  has a semiconductor chip  10  (first semiconductor chip) and a semiconductor chip  20  (second semiconductor chip). The semiconductor chip  20  is formed on the semiconductor chip  10 . The semiconductor chip  20  is constituted by comprising a semiconductor substrate  22 . The semiconductor substrate  22 , which is an SOI substrate, is constituted by comprising an insulating layer  34 , and a silicon layer  36 , which is provided on the insulating layer  34 , including a circuit forming region A 1 . The insulating layer  34  functions as a protective film (a first protective film) covering a lower face (a face opposite to the semiconductor chip  10 ) of the circuit forming region A 1 . A protective film  38  (a second protective film) is provided on the semiconductor substrate  22 . The protective film  38  covers a side face of the circuit forming region A 1.

This application is based on Japanese patent application NO.2004-194667, the content of which is incorporated hereinto by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and asemiconductor wafer and a method for manufacturing the semiconductordevice and the semiconductor wafer.

2. Related Art

In the Japanese Laid-Open patent Publication No. 2000-208702 and theJapanese Laid-Open Patent Publication No. 1996-125120 (H08-125120), theconventional semiconductor device is described. In the manufacturingprocess of the semiconductor device described in the Japanese Laid-OpenPatent Publication No. 2000-208702, firstly, two SOI (Silicon OnInsulator) wafers in which the silicon layer is formed on the siliconsubstrate (support substrate) via the insulating layer are prepared.Continuously, on one wafer (the first wafer) to become the base wafer,the other wafer (a second wafer) is formed into a layered structure suchthat the both silicon layers are faced to each other. Thereafter, thesupport substrate of the second wafer is removed.

Moreover, in the manufacturing process of the semiconductor devicedescribed in the Japanese Laid-Open Patent Publication No. 1996-125120,firstly, a first LSI and a second LSI both provided with an SOIsubstrate are prepared. Continuously, the second LSI is formed on thefirst LSI, after removing the support substrate of the SOI substrate inthe second LSI.

SUMMARY OF THE INVENTION

However, it has now been discovered that when using the process in whichwafers are formed into layered structure (wafer on wafer process), asthe described technique in the Japanese Laid-Open Patent Publication No.2000-208702, in order that the semiconductor device after dicing becomesnon-defective product, both circuit parts formed at a position faced toeach other on two wafers should be non-defective products. That is, evenif one circuit part is non-defective product, when the other circuitpart is defective product, the semiconductor device obtained from themresults in defective product. Consequently, there has been a problemthat the method for forming wafers into layered structure is not capableof obtaining sufficiently high yield.

In order to solve such problem, it is suitable to use a process in whichthe second wafer is made to be chip by dicing, thereafter, the secondwafer with chip state is formed on the first wafer into the layeredstructure (chip on wafer process). In such a way as above, it ispossible to form only the chips ascertained as the non-defective producton the first wafer, thereby it is possible to obtain the semiconductordevice with a high yield.

Moreover, particularly the semiconductor device with height reduction isstrongly desired in the layered type semiconductor device; therefore, asdescribed in the Japanese Laid-Open Patent Publication No. 2000-208702,there is conducted to remove the support substrate of the second wafer.Also, in the technique described in the Japanese Laid-Open PatentPublication No. 1996-125120, as described above, the support substrateof the SOI substrate in the second LSI is removed. However, in themethod for manufacturing the semiconductor device described in theJapanese Laid-Open Patent Publication No. 1996-125120, the supportsubstrate is removed before the second LSI is formed on the first LSIinto the layered structure. In this case, sufficient thickness should besecured for handling of the second LSI, for this reason, heightreduction of the second LSI is limited. Consequently, it is preferablethat removing of the support substrate is performed after the second LSIis formed on the first LSI.

However, structure of the conventional semiconductor device is notsuitable for removing the silicon substrate after forming wafers in thechip on wafer process.

According to the present invention, there is provided a semiconductordevice comprising: a first semiconductor chip, and a secondsemiconductor chip, which has a semiconductor substrate including acircuit forming region, formed on the first semiconductor chip, whereinthe second semiconductor chip has a first protective film covering aface opposite to the first semiconductor chip in the circuit formingregion and has a second protective film covering a side face of thecircuit forming region.

In the semiconductor device thus constructed, the lower face of thecircuit forming region of the second semiconductor chip (the faceopposite to the first semiconductor) and the side face of the circuitforming region of the second semiconductor chip are respectively coveredwith the first protective film and the second protective film. That is,an exposed face of the second semiconductor chip formed on the firstsemiconductor chip is covered with these protective films. Therefore,the semiconductor device has a structure suitable for performingremoving of the support substrate, after forming the secondsemiconductor chip in a chip on wafer process.

An area of the first semiconductor chip may be larger than an area ofthe second semiconductor chip. In this case, a face of the firstsemiconductor chip at the side of the second semiconductor chip resultsin a state where a region on which the second semiconductor chip is notformed is generated. This region is capable of being utilized, forinstance, as a forming region of the external interconnect.

The semiconductor substrate may be constituted by comprising aninsulating layer functioning as the first protective film, and a siliconlayer, which is provided on the insulating layer, including the circuitforming region. The insulating layer may be exposed on a face oppositeto the first semiconductor chip in the second semiconductor chip. Inthis case, the semiconductor device with height reduced is obtainedbecause the support substrate of the second semiconductor chip isremoved.

According to the present invention, there is provided a semiconductorwafer comprising a base wafer, and a semiconductor chip, which has asemiconductor substrate including a circuit forming region, formed onthe base wafer, wherein the semiconductor chip has a first protectivefilm covering a face opposite to the base water in the circuit formingregion and has a second protective film covering a side face of thecircuit forming region.

In the semiconductor wafer thus constructed, a lower face and a sideface of the circuit forming region of the semiconductor chip arerespectively covered with the first protective film and the secondprotective film. That is, the exposed face of the semiconductor chipformed on the base wafer is covered with these protective films.Therefore, the semiconductor wafer has structure suitable for performingremoving of the support substrate after forming the semiconductor chipin the chip on wafer process.

A plurality of semiconductor chips may be provided on the base wafer ata predetermined interval. In this case, it is possible to obtain aplurality of semiconductor devices by dicing the region in which thesemiconductor chip is not provided in the base wafer.

According to the present invention, there is provided a method formanufacturing a semiconductor device in which a semiconductor chiphaving an SOI substrate including a circuit forming region, comprising:preparing a base wafer; preparing a semiconductor chip in which there isprovided the SOI substrate constituted by comprising a supportsubstrate, an insulating layer, which is provided on the supportsubstrate, functioning as a first protective film covering a faceopposite to the base wafer in the circuit forming region, and a siliconlayer, which is provided on the insulating layer, including the circuitforming region, and preparing the semiconductor chip having a secondprotective film covering a side face of the circuit forming region;forming the semiconductor chip on the base wafer such that a side of thesilicon layer is faced to the base wafer; and removing the supportsubstrate of the semiconductor chip formed on the base wafer by etching.

In this manufacturing method, the semiconductor chip in which the lowerface and the side face of the circuit forming region are respectivelycovered with the first protective film and the second protective film isprepared. That is, the exposed face of the semiconductor chip formed onthe base wafer is covered with these protective films in the forming.Therefore, in the removing, it is possible to perform etching of thesupport substrate stably. Consequently, it is possible to obtain thesemiconductor device with height reduced.

According to the present invention, there is provided a method formanufacturing a semiconductor device in which a second semiconductorchip having an SOI substrate including a circuit forming region isformed on a first semiconductor chip, comprising: preparing a base waferwhere the base wafer including the first semiconductor chip is prepared;preparing a semiconductor chip in which there is provided the SOIsubstrate constituted by comprising a support substrate, an insulatinglayer, which is provided on the support substrate, functioning as afirst protective film covering a face opposite to the firstsemiconductor chip in the circuit forming region, and a silicon layer,which is provided on the insulating layer, including the circuit formingregion; and preparing the second semiconductor chip having a secondprotective film covering a side face of the circuit forming region;forming the second semiconductor chip on a part corresponding to thefirst semiconductor chip on the base wafer into a layered structure suchthat a side of silicon layer is faced to the base wafer; removing thesupport substrate of the second semiconductor chip formed on the basewafer by etching; and dicing the base wafer such that the firstsemiconductor chip is divided into pieces, after removing.

In this manufacturing method, the second semiconductor chip in which thelower face and the side face of the circuit forming region arerespectively covered with the first protective film and the secondprotective film is prepared. That is, the exposed face of the secondsemiconductor chip formed on the first semiconductor chip is coveredwith these protective films in forming the semiconductor chip.Therefore, it is possible to perform etching of the support substratestably in the removing. Consequently, it is possible to obtain thesemiconductor device with height reduced.

According to the present invention, there is provided a method formanufacturing a semiconductor wafer in which a semiconductor chip havingan SOI substrate including a circuit forming region is formed on a basewafer, comprising: preparing a base wafer where the base wafer isprepared; preparing a semiconductor chip in which there is provided theSOI substrate constituted by comprising a support substrate, aninsulating layer, which is provided on the support substrate,functioning as a first protective film covering a face opposite to thebase wafer in the circuit forming region, and a silicon layer, which isprovided on the insulating layer, including the circuit forming region,and preparing the semiconductor chip having a second protective filmcovering a side face of the circuit forming region; forming thesemiconductor chip on the base wafer such that a side of the siliconlayer is faced to the base wafer; and removing the support substrate ofthe semiconductor chip formed on the base wafer by etching.

In this manufacturing method, the semiconductor chip in which the lowerface and the side face of the circuit forming region are respectivelycovered with the first protective film and the second protective film isprepared. That is, the exposed face of the semiconductor chip formed onthe base wafer is covered with these protective films in the forming.Therefore, in the removing, it is possible to perform etching of thesupport substrate stably. Consequently, it is possible to obtain thesemiconductor wafer with height reduced.

According to the present invention, the semiconductor device and thesemiconductor wafer with structure suitable for realizing high yield andreducing height and the method for manufacturing them are realized.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, advantages and features of the presentinvention will be more apparent from the following description taken inconjunction with the accompanying drawings, in which:

FIG. 1 is a cross sectional view schematically showing a structure of asemiconductor device according to an embodiment;

FIG. 2 is a cross sectional view schematically showing a structure of asemiconductor wafer according to the embodiment;

FIG. 3 is a cross sectional process view schematically showing a methodfor manufacturing respective semiconductor devices and semiconductorwafers according to the embodiment;

FIG. 4 is a cross sectional process view schematically showing a methodfor manufacturing respective semiconductor devices and semiconductorwafers according to the embodiment;

FIG. 5 is a cross sectional process view schematically showing a methodfor manufacturing respective semiconductor devices and semiconductorwafers according to the embodiment;

FIG. 6 is a cross sectional process view schematically showing a methodfor manufacturing respective semiconductor devices and semiconductorwafers according to the embodiment;

FIG. 7 is a cross sectional process view schematically showing a methodfor manufacturing respective semiconductor devices and semiconductorwafers according to the embodiment;

FIG. 8 is a cross sectional process view schematically showing a methodfor manufacturing respective semiconductor devices and semiconductorwafers according to the embodiment;

FIG. 9 is a cross sectional process view schematically showing a methodfor manufacturing respective semiconductor devices and semiconductorwafers according to the embodiment;

FIG. 10 is a cross sectional process view schematically showing a methodfor manufacturing respective semiconductor devices and semiconductorwafers according to the embodiment;

FIG. 11 is a cross sectional view schematically showing a structure ofthe semiconductor device according to the embodiment; and

FIG. 12 is a cross sectional view schematically showing a structure ofthe semiconductor device according to the embodiment.

DETAILED DESCRIPTION OF THE INVENTION

The invention will now be described herein with reference toillustrative embodiments. Those skilled in the art will recognize thatmany alternative embodiments can be accomplished using the teachings ofthe present invention and that the invention is not limited to theembodiments illustrated for explanatory purposed.

There will be described an embodiment of a semiconductor device and asemiconductor wafer and a method for manufacturing the same according tothe present invention in detail with reference to the drawings below. Itshould be noted that, in the description of the drawings, duplicatedescription is not presented while adding the same symbol to the samecomponent.

The semiconductor device 1 shown in FIG. 1 has a first semiconductorchip (semiconductor chip 10), and a second semiconductor chip(semiconductor chip 20), which has a semiconductor substrate 22including a circuit forming region A1, formed on the first semiconductorchip with a layered structure. The second semiconductor chip has a firstprotective film (insulating layer 34) covering a face opposite to thefirst semiconductor chip in the circuit forming region A1, and a secondprotective film (protective film 38) covering a side face of the circuitforming region A1.

A semiconductor wafer 3 shown in FIG. 2 has a base wafer 80, and asemiconductor chip 20, which has a semiconductor substrate 22 includingthe circuit forming region A1, formed on the base wafer 80. Thesemiconductor chip 20 has the first protective film (insulating layer34) covering a face opposite to the base wafer 80 in the circuit formingregion A1, and the second protective film (protective film 38) coveringa side face of the circuit forming region A1.

A method for manufacturing the semiconductor 1 shown in FIGS. 3 to 10comprises: preparing a base wafer 80 where the base wafer 80 includingthe first semiconductor chip (semiconductor chip 10) is prepared;preparing a semiconductor chip in which there is provided the SOIsubstrate (SOI wafer) constituted by comprising a support substrate 32,an insulating layer 34, which is provided on the support substrate 32,functioning as a first protective film covering a face opposite to thefirst semiconductor chip in the circuit forming region A1, and a siliconlayer 36, which is provided on the insulating layer 34, including thecircuit forming region A1, and preparing the second semiconductor chip(semiconductor chip 20) having a second protective film (protective film38) covering a side face of the circuit forming region A1; forming thesecond semiconductor chip on a part corresponding to the firstsemiconductor chip on the base wafer 80 into a layered structure suchthat a side of the silicon layer 36 is faced to the base wafer 80;removing the support substrate 32 of the second semiconductor chipformed on the base wafer 80 with the layered structure by etching; anddicing the base wafer 80 such that the first semiconductor chip isdivided into pieces, after removing.

A method for manufacturing the semiconductor wafer 3 shown in FIGS. 3 to10 includes: preparing a base wafer 80 where the base wafer 80 isprepared; preparing a semiconductor chip in which there is provided theSOI substrate (SOI wafer) constituted by comprising a support substrate32, an insulating layer 34, which is provided on the support substrate32, functioning as a first protective film covering a face opposite tothe base wafer 80 in the circuit forming region A1, and a silicon layer36, which is provided on the insulating layer 34, including the circuitforming region A1, and preparing the semiconductor chip 20 having asecond protective film (protective film 38) covering a side face of thecircuit forming region A1; forming the semiconductor chip 20 on the basewafer 80 such that a side of the silicon layer 36 is faced to the basewafer 80; and removing the support substrate 32 of the semiconductorchip 20 formed on the base wafer 80 with the layered structure byetching.

FIG. 1 is a cross-sectional view showing the semiconductor deviceaccording to the present embodiment. The semiconductor device 1 isprovided with the semiconductor chip 10 (the first semiconductor chip),the semiconductor chip 20 (the second semiconductor chip) and thesemiconductor chip 40 (the third semiconductor chip). The semiconductorchip 10 is constituted by comprising a semiconductor substrate 12 suchas the silicon substrate or the like, and an interconnect layer 14provided on the semiconductor substrate 12.

The semiconductor chip 20 is formed on the semiconductor chip 10. Thesemiconductor chip 20 is constituted by comprising the semiconductorsubstrate 22 and an interconnect layer 24 provided on the semiconductorsubstrate 22. The interconnect layer 14 of the semiconductor chip 10 andthe interconnect layer 24 of the semiconductor chip 20 are faced to eachother. Moreover, in the present embodiment, an area of the semiconductorchip 10 is larger than an area of the semiconductor chip 20.Consequently, the side face of the semiconductor chip 20 is locatedinside the side face of the semiconductor chip 10, while the side faceof the semiconductor chip 10 projects toward outside the semiconductorchip 20.

The semiconductor substrate 22, which is the SOI substrate, isconstituted by comprising the insulating layer 34 and the silicon layer36, which is provided on the insulating layer 34, including the circuitforming region A1. Here, the circuit forming region A1 is a regionwithin the semiconductor substrate 22; and, in the circuit formingregion A1, component of a circuit device is provided. The component ofthe circuit device is, for instance, a diffusion layer functioning as asource-drain region of a transistor and the like. The insulating layer34 functions as the protective film (the first protective film) coveringthe whole lower face (an opposite side face to the semiconductor chip10) of the circuit forming region A1. It should be noted that theinsulating layer 34 does not strictly cover the lower face in a partwhere a through electrode 50 described later is provided, however it ispossible to regard that the insulating layer 34 covers the whole lowerface substantially. The insulating layer 34 is exposed to the lower face(the opposite side face to the semiconductor chip 10) of thesemiconductor chip 20. The insulating layer 34 is constituted with amaterial having an etchant resistance. The insulating layer 34 isconstituted with, for instance, SiO₂ or the like.

In the semiconductor substrate 22, protective film 38 (the secondprotective film) is provided. The protective film 38 covers the wholeside face of the circuit forming region A1. Moreover, the protectivefilm 38 reaches the insulating layer 34 from the silicon layer 36.Specifically, the protective film 38 extends to inner part of theinsulating layer 34 originating from the surface of the silicon layer 36while penetrating the silicon layer 36. The protective film 38 isconstituted with a material having an etchant resistance. The protectivefilm 38 is constituted with, for instance, the insulating film such asSiO₂ or the like, or metal film such as Cu, W or the like. It should benoted that the protective film 38 may be constituted by having both theinsulating film and the metal film. Even though the protective film 38does not cover strictly the whole side face in such a case where theprotective film 38 is partially notched to be provided, however, it issuitable that the whole side surface is substantially covered.

In the present embodiment, also a side face of the interconnect layer 24is covered with a protective film (the third protective film) not shownin the drawing. The protective film, which is, for instance, a sealring, is constituted with material having an etchant resistance.Moreover, as for material of the protective film, for instance, it ispossible to use the same material as the interconnect inside theinterconnect layer 24.

In the circuit forming region A1, the through electrode 50 is provided.The through electrode 50 reaches the insulating layer 34 from thesilicon layer 36. Specifically, the through electrode 50 extends to aninner part of the insulating layer 34 originating from a surface of thesilicon layer 36 while penetrating the silicon layer 36. In the presentembodiment, both end face positions of the above described protectivefilm 38 and the through electrode 50 at the side of the insulating layer34 is the approximately same as the position of the surface of theinsulating layer 34.

The semiconductor chip 40 is formed on the semiconductor chip 20. Thesemiconductor chip 40 has the support substrate 42, the insulating layer44 provided on the support substrate 42, and the SOI substrateconstituted from the silicon layer 46 provided on the insulating layer.The support substrate 42 is, for instance, the silicon substrate or thelike. Moreover, the interconnect layer 48 is provided on the siliconlayer 46. The lower face of the semiconductor chip 20 and theinterconnect layer 48 of the semiconductor chip 40 are disposed so as tobe faced to each other. However, it is not always necessary for thesemiconductor chip 40 to be constituted by comprising the SOI substrate;it is suitable to be constituted by comprising the other kinds ofsemiconductor substrate.

FIG. 2 is a cross-sectional view showing one embodiment of thesemiconductor wafer according to the present invention. Thesemiconductor wafer 3 has the base wafer 80, the semiconductor chip 20and the semiconductor chip 40. Constitution of the semiconductor chip 20and the semiconductor chip 40 are the same as that shown in FIG. 1. Thebase wafer 80 is constituted by comprising the semiconductor substrate82 such as the silicon substrate or the like, and the interconnect layer84 on the semiconductor substrate 82. It should be noted that, as forthe base wafer 80, it is not limited to general wafer in which the LSIincluding the transistor is provided; it is suitable that a passiveelement or only conductive pattern may be provided on the base wafer.

On the base wafer 80, a plurality of semiconductor chips 20 are formedwith predetermined intervals into layered structure. The interval is setto be larger than thickness of a dicing blade used on the occasion ofdicing the base wafer 80.

There will be explained one example of the method for manufacturing thesemiconductor device 1 and the semiconductor wafer 3, as one embodimentof the method for manufacturing the respective semiconductor device andsemiconductor wafer according to the present invention with reference toFIGS. 3 to 10. Firstly, a SiO₂ film 342, a SiN film 344 and a SiO₂ film346 are sequentially formed on the first silicon wafer to become thesupport substrate 32 into a layered structure. On the first siliconwafer, the second silicon wafer to become the silicon layer 36 isattached; and it is annealed in a vacuum, thus the SOI wafer, in whichthe insulating layer 34 and the silicon layer 36 are formed on thesupport substrate 32 into a layered structure, is obtained. That is, theinsulating layer 34 in the present embodiment is constituted as amultilayered film composed of the SiO₂ film 342, the SiN film 344 andthe SiO₂ film 346 (FIG. 3). It should be noted that it is suitable thata SiCN film or a SiON film, or combination thereof may be used insteadof the SiN film 344 or in addition to the SiN film 344.

Next, a trench 62 reaching the insulating layer 34 from the siliconlayer 36 is formed along a boundary between the circuit forming regionA1 and a scribe line region A2, for instance, by dry etching technique.In the present embodiment, the trench 62 and a hole 64 for the throughelectrode 50 are formed simultaneously. Furthermore, an insulating film66 and an insulating film 68 are formed upon thermal oxidizing thesilicon layer 36 with this condition (FIG. 4).

Next, a metal film 72 is formed upon embedding metal into the trench 62(FIG. 5). Having such process, the protective film 38 is formed. Thatis, in the present embodiment, the protective film 38 is formed withboth the insulating film 66 and the metal film 72. At this time, themetal film 74 is also filled into the hole 64 at the same time asfilling the trench 62. Therefore, the through electrode 50, which isconstituted with both the insulating film 68 and the metal film 74, isformed. Filling the metal in the trench and the hole is performed byforming Cu or W by plating technique or CVD technique, after forming,for instance, barrier metal such as TiN, TaN or Ta or the like.Furthermore, the metal film formed other than inner part of the trench62 and the hole 64, and the insulating film above the silicon layer 36are removed.

Next, a plurality of semiconductor chips 20 are obtained upon performingdicing of the scribe line region A2, after forming necessary circuit andan interconnect layer 24 on the circuit forming region A1 (FIG. 6). Theprocess manufacturing the semiconductor chip 20 as above is called asthe semiconductor chip preparing process.

Successively, the base wafer 80 is prepared (base wafer preparingprocess). It should be noted that the order executing the semiconductorchip preparing process and the base wafer preparing process is arbitral.The semiconductor chip 20 is formed on the base wafer 80 (formingprocess) into the layered structure. It is possible to use, forinstance, activated bonding process for the bonding between the basewafer 80 and the semiconductor chip 20. The surface activated bondingprocess flattens the both bonded surfaces using a CMP technique(Chemical Mechanical Polishing technique) or the like. Then, theopposite electrodes and the opposite insulating films are activatedusing plasma irradiation technique or the like. The bonding is performedwith activated condition kept. It should be noted that it is suitable toperform the bonding between electrodes and the resin sealing while usingthe general flip chip bonding process. In the present embodiment, aplurality of semiconductor chips 20 is formed on the base wafer 80 at apredetermined interval, into a layered structure (FIG. 7).

Next, the support substrate 32 is removed from the semiconductor chip 20by, for instance, wet etching technique (removing process). In removingthe support substrate 32, it is also suitable that the support substrate32 may be removed to some extent using mechanical polishing technique orthe like, before performing wet etching. Having such process, theproductivity of the semiconductor device 1 and the semiconductor wafer 3is improved (FIG. 8). Furthermore, the semiconductor chip 40 isprepared, and then the semiconductor chip 40 is formed on thesemiconductor chip 20 with a layered structure. According to the aboveprocess, the semiconductor wafer 3 is obtained (FIG. 9).

Moreover, the region where the semiconductor chip 20 is not provided inthe base wafer 80 is diced. In such a way as above, the semiconductordevice 1 is obtained (FIG. 10).

There will be described effects of the present embodiment.

In the present embodiment, the lower face and the side face of thecircuit forming region A1 of the semiconductor chip 20 are covered withthe insulating layer 34 and the protective film 38 respectively. Thatis, an exposed surface of the semiconductor chip 20 formed on thesemiconductor chip 10 (or base wafer 80) is covered with theseprotective films. For this reason, the semiconductor device 1 and thesemiconductor wafer 3 have a suitable structure for performing theremoving of the support substrate 32, after forming the semiconductorchip 20 into the layered structure in the chip on wafer process. Thatis, when removing the support substrate 32 by the wet etching technique,it is possible to protect the circuit forming region A1 from the etchantwith the above protective films (the insulating layer 34 and theprotective film 38). Therefore, in the removing process, it is possibleto perform etching of the support substrate 32 stably.

Also, the third protective film with an etchant resistance is providedat a side face of the interconnect layer 24; therefore, it is possibleto perform etching of the support substrate 32 more stably. However, toprovide the third protective film is not indispensable. For instance,when an interlayer insulating film of the interconnect layer 24 hassufficient etchant resistance, stability of the etching is keptsufficiently even though the third protective film is not provided. Itshould be noted that the above protective film 38 may be provided so asto cover the whole side face of the interconnect layer 24 instead of thethird protective film or in addition to the third protective film. Thatis, it is suitable that the protective film 38 may be provided so as tocover not only the side face of the circuit forming region A1 but alsothe side face of the interconnect layer 24. In this case, thesemiconductor device capable of performing the etching of the supportsubstrate 32 more stably with simple constitution is realized. In orderto obtain the protective film 38 having such constitution, formation ofthe protective film 38 may be executed after formation of the circuitforming region A1 and interconnect layer 24, It should be noted that, inthe interconnect layer 24, in addition to the interconnect, variouscircuit elements such as electrode terminals, various passive elementsor the like may be included.

In the above embodiment, the semiconductor device 1 and thesemiconductor wafer 3 are manufactured using the chip on wafer process.Consequently, it becomes possible to form only the semiconductor chip 20ascertained as non-defective product previously on the base wafer 80into the layered structure. For this reason, it is possible to obtainthe semiconductor device 1 and the semiconductor wafer 3 with highyield. Furthermore, since the chip on wafer process is used, it ispossible to obtain easily the semiconductor device in which thesemiconductor chip with different size is formed into the layeredstructure. That the semiconductor chips with different size are capableof being formed in the layered structure leads to improvement of thedegree of freedom in layout of the semiconductor device.

Moreover, removing of the support substrate 32 is executed, afterforming the semiconductor chip 20 on the base wafer 80 into the layeredstructure. For this reason, unlike the semiconductor device described inthe Japanese Laid-Open Patent Publication No. 1996-125120, it is notnecessary to secure the thickness required in a case where thesemiconductor chip 20 is subjected to handling independently.Consequently, it is possible to obtain the very thin semiconductor chip20. That the each semiconductor chip is made thin is leads to heightreduction of the semiconductor device in which each thin semiconductorchips are formed into the layered structure.

In the semiconductor device 1, an area of the semiconductor chip 10 islarger than an area of the semiconductor chip 20. Having suchconfiguration, a region where the semiconductor chip 20 is not formed isgenerated on a face of the semiconductor chip 10 at the side of thesemiconductor chip 20. For instance, it is possible to provide externalinterconnects on this region. Consequently, it becomes not necessary toprovide the external interconnects on the uppermost chip (thesemiconductor chip 40 corresponds to this in the semiconductor device1); there can be realized further height reduction of the semiconductordevice 1.

A plurality of the semiconductor chips are provided on the base wafer80. Having such configuration, it is possible to manufacture theplurality of semiconductor devices simultaneously; therefore,manufacturing productivity of the semiconductor device is improved.

Moreover, since there is provided the through electrode 50 on thesemiconductor chip 20, it is possible to easily achieve conductivitybetween the semiconductor chip 20 and the semiconductor chip 40.Further, the effect of improvement of processing speed and the realizinglow power consumption or the like as compared with the case whereconductivity between the semiconductor chip 20 and the semiconductorchip 40 is performed by the wire bonding or the like is obtained.Furthermore, since the through electrode 50 is manufactured in the sameprocess as forming process of the protective film 38, the semiconductorchip 20 provided with the through electrode 50 can be obtained withoutincrease of the number of process.

However, it is not indispensable to provide the through electrode 50 inthe present embodiment. Also, after the semiconductor chip 20 is formedon the semiconductor chip 10 with the layered structure, it may besuitable that the above conductivity is achieved by forming a holepenetrating the semiconductor substrate 22 from a back surface of thesemiconductor chip 20 and by filling the conductive material into thehole. Moreover, it is suitable that an external electrode terminal maybe formed on the layered semiconductor chip 20 in such a way as toconnect with the conductive material. It is suitable that thesemiconductor chip that such an external electrode terminal is formedmay be any of the semiconductor chip 10, the semiconductor chip 20 andthe semiconductor chip 40.

The insulating layer 34 includes a SiN film 344. For this reason, theinsulating layer 34 also suitably functions as a metal diffusion barrierpreventing diffusion of heavy metal or the like. Furthermore, theinsulating layer 34 is also capable of being functioned as the metaldiffusion barrier in the case that the insulating layer 34 includes aSiON film or a SiCN film.

While the embodiments of the present invention have been described abovein reference to the annexed figures, it should be understood that thedescriptions above are presented for the purpose of illustrating thepresent invention, and various configurations other than theabove-described configurations can also be adopted.

For example, the semiconductor device 1 described above is capable ofbeing incorporated in arbitrary system by incorporating into a generalsemiconductor package using wire bonding technique or by performingmounting with the flip chip bonding technique or the like.

It should be noted that, in the above described embodiment, to providethe semiconductor chip 40 on the semiconductor device 1 or thesemiconductor wafer 3 is not indispensable, it is suitable that it mayresult in constitution where the semiconductor chip 20 becomes a chip ofthe uppermost layer. Moreover, it is not indispensable that theinsulating layer 34 is composed of a multilayered film; for instance, itis also suitable that the insulating layer 34 may be a single layer filmconstituted by a SiO₂ film.

In addition, to provide transistors or the like on the semiconductorchip 20 is not indispensable. For instance, when adopting constitutionin which only the passive element or the through electrode are providedin the semiconductor chip 20, it is possible to suitably use thesemiconductor chip 20 as the silicon interconnect substrate. However,also in this case, the first protective film (insulating layer 34) andthe second protective film (protective film 38) are provided in thesemiconductor chip 20.

Furthermore, the semiconductor chip 10 has the through electrode formedon the semiconductor substrate 12; and there may be adopted constitutionwhere the through electrode is led to the lower face (opposite sidesurface to the semiconductor chip 20) of the semiconductor chip 10.

Moreover, it is suitable that there may be provided rerouting formingprocess after the chip is formed into the layered structure. Thererouting is connected to the arbitrary semiconductor chip, moreover, itis possible to use also forming of the external electrode.

Also, in the semiconductor device 1, it is suitable that a plurality ofsemiconductor chips 20 may be provided on the semiconductor chip 10.

FIG. 11 is a cross-sectional view showing one modified example of thesemiconductor device 1 shown in FIG. 1. In a semiconductor device 1 a, asemiconductor chip 91 and a semiconductor chip 92 are sequentiallyformed on the semiconductor chip 10 with the layered structure.Furthermore, a rerouting (external electrode) 96 is provided on thesemiconductor chip 92. A structure of the semiconductor chip 91 and thesemiconductor chip 92 is the substantially same as the semiconductorchip 20 shown in FIG. 1. Here, area of the chip area gradually decreasesin order of the semiconductor chip 10, the semiconductor chip 91 and thesemiconductor chip 92.

FIG. 12 is a cross-sectional view showing another modified example ofthe semiconductor device 1 shown in FIG. 1. In a semiconductor device 1b, a semiconductor chip 93, a semiconductor chip 94 and a semiconductorchip 95 are sequentially formed on the semiconductor chip 10 with thelayered structure. A structure of the semiconductor chip 93 and astructure of the semiconductor chip 94 are the substantially same as thesemiconductor chip 20 shown in FIG. 1. Moreover, a structure of thesemiconductor chip 95 is the substantially same as the semiconductorchip 40 shown in FIG. 1. Here, a chip area of the semiconductor chip 93is smaller than the area of the semiconductor chip 10, a chip area ofthe semiconductor chip 94 is larger than the area of the semiconductorchip 93, and a chip area of the semiconductor chip 95 is smaller thanthe area of the semiconductor chip 94.

As known from FIG. 11 and FIG. 12, in the semiconductor device 1 of theabove described embodiment, it is possible to freely select a chip sizeto form layered structure. It should be noted that, as shown in FIG. 12,when relatively large chip (semiconductor chip 94) is formed onrelatively small chip (semiconductor chip 93) into the layeredstructure, it is preferable that also the upper surface of thesemiconductor chip 94 (surface at the side of the semiconductor chip 93)is provided employing material having an etchant resistance.

It is apparent that the present invention is not limited to the aboveembodiment that modified and changed without departing from the scopeand spirit of the invention.

1. A semiconductor device comprising: a first semiconductor chip; asecond semiconductor chip, which has a semiconductor substrate includinga circuit forming region, formed on said first semiconductor chip,wherein said second semiconductor chip has a first protective filmcovering a face opposite to said first semiconductor chip in saidcircuit forming region and has a second protective film covering a sideface of said circuit forming region; and a through electrode penetratingsaid first protective film.
 2. The semiconductor device according toclaim 1, wherein an area of said first semiconductor chip is larger thanan area of said second semiconductor chip.
 3. The semiconductor deviceaccording to claim 1, wherein said semiconductor substrate isconstituted by comprising an insulating layer functioning as said firstprotective film, and a silicon layer, which is provided on saidinsulating layer, including said circuit forming region, and whereinsaid insulating layer is exposed on a face opposite to said firstsemiconductor chip in said second semiconductor chip.
 4. Thesemiconductor device according to claim 1, wherein said secondsemiconductor chip has an interconnect layer at a lower part of saidcircuit forming region, and wherein a third protective film is providedso as to cover said interconnect layer.
 5. The semiconductor deviceaccording to claim 1, wherein said second semiconductor chip includes aconductor penetrating said semiconductor substrate in said circuitforming region.
 6. The semiconductor device according to claim 5,wherein said semiconductor device includes a third semiconductor chipformed on said second semiconductor chip, and wherein said secondsemiconductor chip is electrically connected to said third semiconductorchip via said conductor.
 7. A semiconductor wafer comprising: a basewafer; a semiconductor chip, which has a semiconductor substrateincluding a circuit forming region, formed on said base wafer, whereinsaid semiconductor chip has a first protective film covering a faceopposite to said base wafer in said circuit forming region and has asecond protective film covering a side face of said circuit formingregion; and a through electrode penetrating said first protective film.8. The semiconductor wafer according to claim 7, wherein a plurality ofsaid semiconductor chips are provided on said base wafer at apredetermined interval.
 9. The semiconductor wafer according to claim 7,wherein said semiconductor chip has an interconnect layer at a lowerpart of said circuit forming region, and wherein there is provided athird protective film is provided so as to cover said interconnectlayer.
 10. The semiconductor wafer according to claim 7, wherein saidsemiconductor chip includes a conductor penetrating a semiconductorsubstrate in said circuit forming region.
 11. The semiconductor waferaccording to claim 10, wherein said semiconductor wafer includes anupper part semiconductor chip formed on said semiconductor chip, andwherein said semiconductor chip is electrically connected to said upperpart semiconductor chip via said conductor.